113-05-01
學歷：成功大學 電機 博士
專長：微電、光電
研究方向：半導體元件
教授課程：電子學、半導體元件物理
著作：
(A) 期刊論文
[1] Wen-Chau Liu, Ching-Hsi Lin, Yeong-Shyang Lee, and Der-Feng Guo, 1991,“GaAs quantum well negative differential resistance device prepared by molecular beam epitaxy,” J. Vac. Sci. & Technol. B, vol. 9, pp. 243-248. NSC-79-0404-E-006-33-
[2]Wen-Chau Liu, Yeong-Shyang Lee, and Der-Feng Guo, 1991, “A new resonant-tunneling bipolar transistor with triple-well emitter structure,” Solid-State Electron., vol. 34, pp. 1457-1459. NSC-80-0404-E-006-54-
[3]Wen-Chau Liu,Der-Feng Guo,Chung-Yih Sun,and Wen-Shiung Lour, 1991,“Morphological defects on Be-doped AlGaAs layers grown by MBE,”J.Cryst.Growth,vol.114,pp.700-706.NSC-80-0404-E-006-54-
[4]Wen-Chau Liu, Der-Feng Guo, and Yeong-Shyang Lee,1991,“A confinement-collector GaAs switching device prepared by molecular beam epitaxy,”Jpn.J.Appl.Phys.,vol.30, pp. 1937-1939. NSC-80-0404-E-006-14-
[5]Wen-Chau Liu, Wen-Shiung Lour, and Der-Feng Guo, 1992, “New AlGaAs/ GaAs double heterostructure-emitter bipolar transistor prepared by molecular beam epitaxy,” Appl. Phys. Lett., vol. 60, pp. 362-364. NSC-80-0404-E-006-54-
[6]Wen-Chau Liu, Chung-Yih Sun, Wen-Shiung Lour, and Der-Feng Guo, 1992, “Applications of sawtooth doping superlattice for negative-differential-resistance devices fabrication,” J. Vac. Sci. & Technol. B, vol. 10, pp. 60-66. NSC-80-0404-E-006-14-
[7]Wen-Chau Liu and Der-Feng Guo,1992,“A new GaAs switching device with double-confinement-collector structure,”Solid-State Electron.,Vol.35,pp.501-504.NSC-80-0404-E-006-14-
[8]Wen-Chau Liu,Chung-Yih Sun,and Der-Feng Guo,1992,Regenerative switching properties of a sawtooth-doping-superlattice-collector bipolar transistor,” Appl. Phys. Lett., vol. 61, pp. 471-473.NSC-80-0404-E-006-105-
[9]Wen-Chau Liu,Der-Feng Guo,and Wen-Shiung Lour,1992, AlGaAs/GaAs double heterostructure-emitter bipolar transistor (DHEBT),” IEEE Trans. Electron Devices, vol. 39, pp. 2740-2744. NSC-81-0404-E-006-105-
[10]Wen-Shiung Lour, Wen-Chau Liu, Der-Feng Guo, and Rong-Chau Liu, 1992,“Modeling the DC performance of heterostructure-emitter bipolar transistor,”Jpn. J. Appl. Phys., vol. 31, pp. 2388-2393. NSC-81-0404-E-006-102-
[11]Wen-Chau Liu,Der-Feng Guo,and Wen-Shiung Lour,1992, Application of an emitter edge-thinning technique to GaAs/AlGaAs double heterostructure-emitter bipolar transistor,” Appl. Phys. Lett., vol. 61, pp. 1441-1443. NSC-81-0404-E-006-105-
[12]Der-Feng Guo, Wen-Chau Liu, Wen-Shiung Lour, Chung-Yih Sun, and Rong-Chau Liu, 1992, “Application of a triple-well superlattice-emitter structure to GaAs switching device,” J. Appl. Phys., vol. 72, pp. 4414-4416. NSC-81-0404-E-006-102-
[13]Wen-Shing Lour, Wen-Chau Liu, Chung-Yih Sun, Der-Feng Guo, and Rong-Chau Liu, 1993, “Multi-state superlattice-emitter resonant-tunneling bipolar transistor with circuit applications,”Superlattices & Microstructures, vol. 13, pp. 81-86. NSC-82-0404-E-006-248-
[14]Wei-Chou Hsu, Der-Feng Guo, Wen-Chau Liu, and Wen-Shiung Lour, 1993, “A tristate switching device with double delta-doped quantum well structure,” Solid-State Electron., vol. 36, pp. 1089-1092. NSC-82-0404-E-006-248-
[15]Chung-Yih Sun, Wen-Chau Liu, Der-Feng Guo, Wen-Shiung Lour, and Rong-Chau Liu, 1993, “Fabrication of heterostructure-emitter bipolar transistor with a doping-superlattice collector,” Superlattices & Microstructures, vol. 13, pp. 75-79.
[16]Wei-Chou Hsu, Wen-Chau Liu, Der-Feng Guo, and Wen-Shiung Lour, 1993,“GaAs-InGaAs double delta-doped quantum-well switching device prepared by molecular beam epitaxy,” Appl. Phys. Lett., vol. 62, pp. 1504-1506. NSC-81-0404-E-006-105-
[17]Wen-Chau Liu, Chung-Yih Sun, Der-Feng Guo, and Rong-Chau Liu, 1993, “Perpendicular transport properties of a p-GaAs/-doped superlattice/-GaAs structure,” IEE Proc. (G), vol. 140, pp. 81-84. NSC-80-0404-E-006-54-
[18]Wen-Chau Liu, Chung-Yih Sun, Wei-Chou Hsu, and Der-Feng Guo, 1993, “Application of doping-superlattice collector structure for GaAs bipolar transistor,” Jpn. J. Appl. Phys., vol. 32, pp. 1575-1582. NSC-81-0404-E-006-105-
[19]Wei-Chou Hsu, Der-Feng Guo, Wen-Chau Liu, and Wen-Shiung Lour, 1993, “Characteristics of a GaAs-InGaAs delta-doped quantum-well switch,” J. Appl. Phys., vol. 73, pp. 8615-8617. NSC-81-0404-E-006-105-
[20]Der-Feng Guo, Wen-Chen Yeou, Wen-Shiung Lour, Wei-Chou Hsu, and Wen-Chau Liu, 1993, “Regenerative switching phenomenon of a GaAs structure,” Jpn. J. Appl. Phys., vol. 32, pp. L1011-L1013. NSC-82-0404-E-006-248-
[21]Der-Feng Guo, Shiuh-Ren Yih, Jing-Tong Liang, and Wen-Chau Liu, 1994, “Characteristics of a GaAs switch,” Solid-State Electron., vol. 37, pp. 223-229. NSC-82-0404-E-006-274-
[22]Wen-Chau Liu, Der-Feng Guo, Shiuh-Ren Yih, Jing-Tong Liang, Lih-Wen Liah, and Gau-Ming Lyuu, 1994, “GaAs-InGaAs quantum-well resonant-tunneling switching device grown by molecular beam epitaxy,” Appl. Phys. Lett., vol. 64, pp. 2685-2687. NSC-83-0404-E-006-016-
[23]Der-Feng Guo, Lih-Wen Liah, Jung-Hui Tsai, Wen-Chau Liu, and Wei-Chou Hsu, 1995, “Characteristics of a GaAs-InGaAs quantum-well resonant-tunneling switch,” J. Appl. Phys., vol. 77, no. 6, pp. 2782-2785. NSC-83-0404-E-006-049-
[24]Wen-Chau Liu, Jun-Hui Tsai, Lih-Wen Laih, Cheng-Zu Wu, Kong-Beng Thei, Wen-Shiung Lour, and Der-Feng Guo, 1995, “Heterostructure confinement effect on the negative-differential-resistance (NDR) bipolar transistor,” Superlattices & Microstructures, vol. 17, pp. 445-456. NSC-84-2215-E-006-014-
[25]Der-Feng Guo, 1996, “Characteristics of bulk-barrier switching devices with InGaAs-GaAs delta-doped quantum wells,” Solid-State Electron., vol. 39, no. 9, pp. 1365-1369. NSC-85-2215-E-013-001-
[26]Der-Feng Guo, 1996, “Resonant tunneling characteristics of a delta-doped strained-layer quantum-well switching device ( -SQSD),” Solid-State Electron., vol. 39, no. 11, pp. 1637-1641. NSC-85-2215-E-013-001-
[27]Der-Feng Guo, Chin-Chuan Cheng, Kun-Wei Lin, Wen-Chau Liu, and Wei Lin, 1996, “A multiple-negative-differential-resistance switch with double InGaP barriers,” Appl. Phys. Lett., vol. 69, no. 27, pp. 4185-4187. NSC-85-2215-E-013-001-
[28]Der-Feng Guo, 1997, “Characteristics of a triple-well heterostructure-emitter bipolar transistor (TWHEBT),” Solid-State Electron., vol. 41, no. 3, pp. 501-506. NSC-85-2215-E-013-001-
[29]Der-Feng Guo, 1997, “A multistate switch with double delta-doped strained-layer quantum wells,” Jpn. J. Appl. Phys. (Part 1), vol. 36, no. 8, pp. 5057-5059. NSC-85-2215-E-013-001-
[30]Der-Feng Guo,1997,“A multistate switch based on the carrier tunneling and confinement effects of barrier,”Solid-State Electron.,vol.41,no.11,pp.1731-1734. NSC-85-2215-E-013-001-
[31]Der-Feng Guo,1997,“Bistable GaAs-InGaP triangular-barrier optoelectronic switch,” Appl. Phys. Lett., vol. 71, no. 9, pp. 1219-1221. NSC-85-2215-E-013-001-
[32]Der-Feng Guo, 1998,“Negative-differential-resistance characteristics in a triangular-barrier resonant tunneling switch,” Semicond. Sci. & Technol., vol. 13, no. 2, pp. 231-235.
[33]Der-Feng Guo, 1998, “Switches with double carrier confinement structures for multiple-valued logic applications,” Semicond. Sci. & Technol., vol. 13, no. 8, pp. 957-962.
[34]Der-Feng Guo, Oct. 1998, “An optoelectronic switch based on a triangular-barrier structure,” IEEE J. Quantum Electronics, vol. 34, no. 10, pp. 1882-1885.
[35]Der-Feng Guo, 1998,“Heterostructure optoelectronic switch with lightcontrollable S-shaped negative differential resistance,” Appl. Phys. Lett., vol. 72, no. 9, pp.1010-1012.
[36]Der-Feng Guo, 2000,“A GaAs-InGaAs optoelectronic switch with multiple operation states,”Opt. Quantum Electron. ,vol. 32, no. 12, pp.1301-1306.
[37]Der-Feng Guo, 2001,“Optoelectronic switch performance in double heterostructure-emitter bipolar transistor,” Solid-State Electron., vol. 45, no. 7, pp. 1179-1182. NSC 89-2215-E-013-001
[38]Der-Feng Guo, 2001,“Illumination effect on switching performance of a triangular-barrier resonant-tunneling diode,” IEE Proc.-Optoelectronics,vol.148,no.2,pp.121-123. NSC 89-2215-E-013-001.
[39]Der-Feng Guo, 2002,“Optoelectronic behavior in a double-barrier-emitter triangular barrier switch,” J. Appl. Phys., vol. 91, no. 2, pp. 672-675.NSC 90-2215-E-013-001
[40]Der-Feng Guo, 2003, “A new AlGaAs/GaAs/InAlGaP npn bulk-barrier optoelectronic switch (BBOS),” IEEE Electron Device Lett., vol. 3, pp. 162-164.
[41]Der-Feng Guo, Jing-Yuh Chen, Hung-Ming Chuang, Chun-Yuan Chen and Wen-Chau Liu, 2004, “Characteristics of a new BBOS with an AlGaAs- -GaAs-InAlGaP Collector Structure,” IEEE Trans. Electron Devices, vol. 51, pp. 542-547. NSC-92-2218-E-013-001-.
[42]Der-Feng Guo, Jing-Yuh Chen, Hung-Ming Chuang, Chun-Yuan Chen and Wen-Chau Liu, 2004, “A double-barrier-emitter triangular-barrier optoelectronic switch,” IEEE J. Quantum Electronics, vol. 40, pp. 413-419. NSC-92-2218-E-013-001-
[43]Jing-Yuh Chen, Der-Feng Guo, Shiou-Ying Cheng, Kuan-Ming Lee, Chun-Yuan Chen, Hung-Ming Chuang, Ssu-Yi Fu and Wen-Chau Liu, 2004, “A new InP-InGaAs HBT with a superlattice-collector structure,” IEEE Electron Device Lett., vol. 25, pp. 244-246.
[44]Der-Feng Guo, 2006, “Bulk-barrier and potential-spike height effects on characteristics of npn heterostructural optoelectronic switches,” IEE Proc.-Optoelectronics., vol. 153, pp. 63-66. NSC-94-2215-E-013-002-
[45]Der-Feng Guo, 2006, “A Schottky-Contact Triangular-Barrier Optoelectronic Switch (STOS),” IEEE Electron Device Lett., vol. 27, pp. 37-39. NSC-94-2215-E-013-002-
[46]Chun-Wei Chen, Po-Hsien Lai,Wen-Shiung Lour, Der-Feng Guo, Jung-Hui Tsai and Wen-Chau Liu, 2006, “Temperature dependences of an based metamorphic high electron mobility transistor (MHEMT),” Semicond. Sci. & Technol., vol. 21, pp. 1358-1363.
[47]Jung-Hui Tsai, Shao-Yen Chiu, Wen-Shiung Lour, Der-Feng Guo and Wen-Chau Liu,2006,“Application of double camel-like gate structures for a GaAs field-effect transistor with extremely high potential barrier height and gate turn-on voltage,”Semicond. Sci. & Technol., vol. 21, pp. 1132-1138.
[48]Tzu-Pin Chen, Ssu-I Fu, Jung-Hui Tsai, Wen-Shiung Lour, Der-Feng Guo, Shiou-Ying Cheng and Wen-Chau Liu, 2006, “Temperature-dependent characteristics of an emitter-ledge passivated InGaP/GaAs heterojunction bipolar transistor,” Semicond. Sci. & Technol., vol. 21, pp. 1733-1737.
[49]Der-Feng Guo, Chih-Hung Yen, Jung-Hui Tsai, Wen-Shiung Lour and Wen-Chau Liu, 2007, “Characteristics improvement for an npn-heterostructure Optoelectronic switch by introducing a wide-gap layer in the collector,” J. Electrochemical Society, vol. 154, pp. H13-H15. NSC 95-2221-E-013-004
[50]Der-Feng Guo, Chih-Hung Yen, Jung-Hui Tsai, Wen-Shiung Lour and Wen-Chau Liu, 2007, “Investigation of amplifying and switching characteristics in double heterostructure-emitter bipolar transistors,” J. Electrochemical Society, vol. 154, pp. H283-H288. NSC 95-2221-E-013-004
[51]Tzu-Pin Chen,Ssu-I Fu,Wen-Shiung Lour,Jung-Hui Tsai, Der-Feng Guo and Wen-Chau Liu,2007,“Temperature Effect of a Heterojunction Bipolar Transistor with an Emitter-Edge-Thinning Structure,”Electrochemical and Solid-State Letters,vol.10,pp. H56-H58.
[52]Tzu-Pin Chen, Ssu-I Fu, Shiou-Ying Cheng, Jung-Hui Tsai, Der-Feng Guo, Wen-Shiung Lour and Wen-Chau Liu, 2007, “Surface treatment effect on temperature-dependent properties of InGaP/GaAs heterobipolar transistors,” J. Appl. Phys.,vol. 101, pp. 034501-1-034501-5.
[53]Jung-Hui Tsai, Der-Feng Guo, Yu-Chi Kang and Tzu-Yen Weng, 2007, “Characteristics of InP/InGaAs pnp heterostructure-emitter bipolar transistor (HEBT),”Physica Scripta,vol. T129, pp. 293-296.
[54]Jung-Hui Tsai, Chien-Ming Li, Wen-Chau Liu,Der-Feng Guo, Shao-Yen Chiu and Wen-Shiung Lour, 2007, “Integration of n- and p-channel InGaP/InGaAs doped-channel pseudomorphic HFETs,”Electronics Letters, vol. 43, no. 13, pp. 732-734.
[55]Jung-Hui Tsai, Wen-Chau Liu, Der-Feng Guo,Yu-Chi Kang, Shao-Yen Chiu, and Wen-Shiung Lour, 2008, “Electrical Properties of InP/InGaAs pnp Heterostructure-Emitter Bipolar Transistor,” Semiconductor, vol. 42, no. 3, pp. 346-349.
[56]Der-Feng Guo, Jung-Hui Tsai, Tzu-Yen Weng , Chih-Hung Yeng, Po-Hsien Lai, Ssu-Yi Fu, Ching-Wen Hung and Wen-Chau Liu, 2008, “Investigation on Heterostructural Optoelectronic Switches,” Surface Review and Letters, vol. 15, no. 1/2, pp. 139-144.
[57]M K Hsu, S Y Chiu, C H Wu, D F Guo and W S Lour, 2008, “Comparative influence study of gate-formation structuring on Al0.22Ga0.78As/ In0.16Ga0.84As/Al0.22Ga0.78As double heterojunction high electron mobility transistors,” Semicond. Sci. & Technol., vol. 23, pp. 125014.
[58]Jung-Hui Tsai, Shao-Yen Chiu, Wen-Shiung Lour, and Der-Feng Guo, “High-performance InGaP/GaAs pnp d-doped heterojunction bipolar transistor,”accepted,Semiconductor, 2009.
[59]Tzu-Pin Chen, Chi-Jhung Lee,Wen-Shiung Lour, Der-Feng Guo, Jung-Hui Tsai, “On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs)” Solid-State Electron., vol. 53, no. 2, pp. 190-194. , and Wen-Chau Liu, 2009
[60]Der-Feng Guo, Chih-Hung Yen, Jung-Hui Tsai, Wen-Shiung Lour and Wen-Chau Liu, 2007, “Characteristics improvement for an npn-heterostructure Optoelectronic switch by introducing a wide-gap layer in the collector,” J. Electrochemical Society, vol. 154, pp. H13-H15.
[61]Der-Feng Guo, Chih-Hung Yen, Jung-Hui Tsai, Wen-Shiung Lour and Wen-Chau Liu, 2007, “Investigation of amplifying and switching characteristics in double heterostructure-emitter bipolar transistors,” J. Electrochemical Society, vol. 154, pp. H283-H288. NSC 95-2221-E-013-004
[62]Tzu-Pin Chen, Ssu-I Fu, Wen-Shiung Lour, Jung-Hui Tsai, Der-Feng Guo and Wen-Chau Liu, 2007, “Temperature Effect of a Heterojunction Bipolar Transistor with an Emitter-Edge-Thinning Structure,” Electrochemical and Solid-State Letters, vol. 10, pp. H56-H58.
[63]Tzu-Pin Chen, Ssu-I Fu, Shiou-Ying Cheng, Jung-Hui Tsai, Der-Feng Guo, Wen-Shiung Lour and Wen-Chau Liu, 2007, “Surface treatment effect on temperature-dependent properties of InGaP/GaAs heterobipolar transistors,” J. Appl. Phys., vol. 101, pp. 034501-1-034501-5.
[64]Jung-Hui Tsai, Der-Feng Guo, Yu-Chi Kang and Tzu-Yen Weng, 2007, “Characteristics of InP/InGaAs pnp heterostructure-emitter bipolar transistor (HEBT),” Physica Scripta, vol. T129, pp. 293-296.
[65]Jung-Hui Tsai, Chien-Ming Li, Wen-Chau Liu, Der-Feng Guo, Shao-Yen Chiu and Wen-Shiung Lour, 2007, “Integration of n- and p-channel InGaP/InGaAs doped-channel pseudomorphic HFETs,” Electronics Letters, vol. 43, no. 13, pp. 732-734.
[66]H. R. Chen, M. K. Hsu, S. Y. Chiu, W. T. Chen, D. F. Guo and W. S. Lour, 2007, “Characteristics of self-built field-plate gate on InGaP/InGaAs heterojunction doped-channel field effect transistors,” Semicond. Sci. & Technol., vol. 22, pp. 263-269.
[67]Jung-Hui Tsai, Wen-Chau Liu, Der-Feng Guo, Yu-Chi Kang, Shao-Yen Chiu, and Wen-Shiung Lour, 2008, “Electrical Properties of InP/InGaAs pnp Heterostructure-Emitter Bipolar Transistor,” Semiconductor, vol. 42, no. 3, pp. 346-349.
[68]Der-Feng Guo, Jung-Hui Tsai, Tzu-Yen Weng , Chih-Hung Yeng, Po-Hsien Lai, Ssu-Yi Fu, Ching-Wen Hung and Wen-Chau Liu, 2008, “Investigation on Heterostructural Optoelectronic Switches,” Surface Review and Letters, vol. 15, no. 1/2, pp. 139-144.
[69]M K Hsu, S Y Chiu, C H Wu, D F Guo and W S Lour, 2008, “Comparative influence study of gate-formation structuring on Al0.22Ga0.78As/ In0.16Ga0.84As/Al0.22Ga0.78As double heterojunction high electron mobility transistors,” Semicond. Sci. & Technol., vol. 23, pp. 125014.
[70]Li-Yang Chen, Shiou-Ying Cheng, Wen-Shiung Lour, Jung-Hui Tsai, Der-Feng Guo, Tsung-Han Tsai, Tzu-Pin Chen, Yi-Chun Liu, and Wen-Chau Liu, 2008, “Effect of non-annealed ohmic-recess approach on temperature-dependent properties of a metamorphic high electron mobility transistor” Semicond. Sci. Technol., vol. 23, no. 12, pp. 125041.
[71]Tzu-Pin Chen, Chi-Jhung Lee, Wen-Shiung Lour, Der-Feng Guo, Jung-Hui Tsai, and Wen-Chau Liu, 2009, “On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs)” Solid-State Electron., vol. 53, no. 2, pp. 190-194.
[72]Tzu-Pin Chen, Chi-Jhung Lee, Shiou-Ying Cheng, Wen-Shiung Lour, Jung-Hui Tsai, Der-Feng Guo, Ghun-Wei Kua, and Wen-Chau Liu, 2009, “Effect of Emitter Ledge Thickness on InGaP/GaAs Heterojunction Bipolar Transistors,” Electrochem. Solid-State Lett., vol. 12, pp. H41-H43.
(B) 研討會論文
[1]W.C. Liu, W.S. Lour, C.Y. Sun, D.F. Guo, and Y.S. Lee, 1991, “MBE grown double negative-differential-resistance AlGaAs/GaAs superlattice-emitter transistor,” the Sixth European Conference on Molecular Beam Epitaxy and Related Growth Methods, Tampere, Finland. NSC- - - - - -
[2]W.C. Liu, W.S. Lour, C.Y. Sun, Y.S. Lee, and D.F. Guo, 1991, “Application of AlGaAs/GaAs superlattice for negative-differential-resistance transistor,” Proc. International Conference on Thin Film Physics and Applications ('91TFPA), SPIE vol. 1519, pp. 670-674, Shanghai, China. NSC-80-0404-E-006-54-
[3]W.C. Liu, C.Y. Sun, W.S. Lour, D.F. Guo, and Y.S. Lee, 1991, “Applications of GaAs graded-period doping superlattice for negative-differential-resistance device,” Proc. International Conference on Thin Film Physics and Applications ('91TFPA), SPIE vol. 1519, pp. 640-644, Shanghai, China. NSC-80-0404-E-006-54-
[4]W.C. Liu, W.S. Lour, C.Y. Sun, Y.S. Lee, and D.F. Guo, 1991, “A new multi-functional AlGaAs/GaAs heterostructure-emitter bipolar transistor,” 1991 International MicroProcess Conference B-8-2, Kanazawa, Japan. NSC-80-0404-E-006-14-
[5]W.C. Liu, C.Y. Sun, W.S. Lour, D.F. Guo, and Y.S. Lee, 1991, “The room temperature characteristics of GaAs -doped superlattice switching transistor,” Proc. International Conference on Solid State Devices and Materials, pp. 368-370, Yokohama, Japan. NSC-80-0404-E-006-54-
[6]Y.S. Lee, W.C. Liu, W.S. Lour, C.Y. Sun, and D.F. Guo, 1991, “Investigation of superlattice-emitter bipolar transistor prepared by molecular beam epitaxy,” Proc. Electronic Devices and Materials Symposium, pp. 359-363, Taipei, Taiwan, R.O.C. NSC- - - - - -
[7]W.C. Liu, W.S. Lour, Y.H. Wang, C.Y. Sun, Y.S. Lee, and D.F.Guo, 1991,“Hybrid (confinement and tunneling) application of AlGaAs/GaAs superlattice in a double-NDR transistor,” Proc. International Conference on Solid State Devices and Materials, pp. 371-373, Yokohama, Japan.
[8]D.F. Guo, W.C. Liu, W.S. Lour, C.Y. Sun, and Y.S. Lee, 1991, “Investigation of heterostructure-emitter transistor prepared by molecular beam epitaxy,” Proc. Electronic Devices and Materials Symposium, pp. 364-368, Taipei, Taiwan, R.O.C. NSC- - - - - -
[9]W.C. Liu, C.Y. Sun, D.F. Guo, and W.S. Lour, 1992, “Application of sawtooth-doping-superlattice collector to bipolar transistor,” Abstr. 6th International Conference on Superlattices, Microstructures and Microdevices, pp. 115, Xi'an, China. NSC- - - - - -
[10]W.C. Liu, W.S. Lour, C.Y. Sun, and D.F. Guo, 1992, “Multi-state superlattice-emitter resonant-tunneling bipolar transistor with circuit applications,” Abstr. 6th International Conference on Superlattices, Microstructures and Microdevices, pp. 116, Xi'an, China. NSC- - - - - -
[11]W.C. Liu, D.F. Guo, W.S. Lour, C.Y. Sun, and R.C. Liu, 1992, “MBE grown GaAs double heterostructure-emitter bipolar transistor,” Proc. International Electronic Devices and Materials Symposium, pp. 243-246, Taipei, Taiwan, R.O.C. NSC- - - - - -
[12]W.C. Liu, C.Y. Sun, D.F. Guo, and R.C. Liu, 1992, “MBE grown GaAs sawtooth-doping-superlattice-collector bipolar transistor,” Proc. International Electronic Devices and Materials Symposium, pp. 458-461, Taipei, Taiwan, R.O.C. NSC- - - - - -
[13]Wen-Chau Liu, Chung-Yih Sun, Der-Feng Guo, and Wen-Shiung Lour, 1993, “Investigation of GaAs doping superlattice structure,” Proc. 1993 Symposium on Semiconductor Modeling & Simulation, pp. 91-92, Taipei, Taiwan, R.O.C. NSC- - - - - -
[14]Wen-Chau Liu, Der-Feng Guo, Wen-Shiung Lour, and Chung-Yih Sun, 1993,“GaAs bipolar transistor with a triple-well emitter structure,”Proc. 1993 Symposium on Semiconductor Modeling & Simulation, pp. 95-96, Taipei, Taiwan, R.O.C. NSC- - - - - -
[15]Wen-Chau Liu, Wen-Shiung Lour, Der-Feng Guo, and Chung-Yih Sun, 1993, “Modeling and simulating the electrical properties of heterostructure-emitter bipolar transistor,” Proc. 1993 Symposium on Semiconductor Modeling & Simulation, pp. 69-70, Taipei, Taiwan, R.O.C. NSC- - - - - -
[16]Wen-Chau Liu, Der-Feng Guo, Shiuh-Ren Yih, and Gau-Ming Lyuu, 1993, “The new tristate switches with double delta-doped quantum-well structure,” Proc. Electronic Devices and Materials Symposium, pp. 28-31, Chungli, Taiwan, R.O.C. NSC- - - - - -
[17]Wen-Chau Liu, Der-Feng Guo, Jing-Tong Liang, and Lih-Wen Laih, 1993, “A new GaAs doped-channel field-effect transistor,” Proc. Electronic Devices and Materials Symposium, pp. 148-150, Chungli, Taiwan, R.O.C. NSC-82-0404-E-006-274-
[18]Wen-Chau Liu, Der-Feng Guo, and Lih-Wen Laih, 1994, “MBE grown GaAs-InGaAs quantum-well resonant-tunneling switching device,” Proc. International Electronic Devices and Materials Symposium, pp. 46-48, Hsinchu, Taiwan, R.O.C. NSC- - - - - -
[19]Wen-Chau Liu, Der-Feng Guo, Lih-Wen Laih, 1994, “A new negative-differential-resistance resonant-tunneling switch with delta-doped quantum-well structure,” Proc. 1994 International Conference on Solid State Devices and Materials, pp. 796-798, Yokohama, Japan. NSC-83-0404-E-006-016-
[20]Wen-Chau Liu, Der-Feng Guo, Shiuh-Ren Yih, Jing-Tong Liang, Lih-Wen Laih, and Gau-Ming Lyuu, 1994, “A new delta-doped quantum-well InGaAs-GaAs resonant-tunneling switching device,” Proc. 24th European Solid State Device Research Conference, pp. 551-554, Edinburgh, United Kingdom. NSC-83-0404-E-0060-016-
[21]Wen-Chau Liu, Lih-Wen Laih, Der-Feng Guo, and Jung-Hui Tsai, 1994, “Defects on Be-doped AlGaAs layers grown by molecular beam epitaxy,” International Conference of Electrical Materials, pp. 171-176, Taiwan, R.O.C.
[22]Der-Feng Guo, May 18, 1995, “Bulk-barrier switching device with a delta-doped quantum well and a Schottky contact,” 陸軍官校電機、資訊基礎學術研討會, pp. 285-290, Kaohsiung, Taiwan, Republic of China.
[23]Der-Feng Guo, Lih-Wen Laih, Jung-Hui Tsai, and Wen-Chau Liu, Oct. 9-12 1995, “Applications of InGaAs-GaAs delta-doped quantum wells to bulk-barrier switching devices,” 1995 International Laser, Lightwave and Microwave Conference, Shanghai, China.
[24]Der-Feng Guo, Jung-Hui Tsai, Lih-Wen Laih, Wen-Chau Liu, Yuan-Tzu Ting, and Rong-Chau Liu, Oct. 15-18, 1995, “Delta-doped quantum-well switching devices grown by molecular beam epitaxy,” 4th International Conference on VLSI and CAD (ICVC'95), Seoul, Korea.
[25]Der-Feng Guo, June 7, 1996, “Characteristics of a triple-well heterostructure-emitter bipolar transistor,” Proc. The Third Military Symposium on Fundamental Science, pp. 463-466, Kaohsiung, Taiwan, Republic of China.
[26]Der-Feng Guo, June 7, 1996, “Double delta-doped ( -doped) quantum-well switching device,” Proc. The Third Military Symposium on Fundamental Science, pp. 467-470, Kaohsiung, Taiwan, Republic of China.
[27]Der-Feng Guo, Dec. 8-11, 1996, “A delta-doped strained-layer quantum-well switch,” Proc. Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD ’96), pp. 1-2, Canberra, Australia. NSC-85-2215-E-013-001-
[28]Der-Feng Guo, May 4-9, 1997, “A GaAs-InGaP switch performing multiple negative-differential-resistance (NDR) characteristics,” Proc. Twenty-Sixth State-of-the-Art Program on Compound Semiconductors, pp.269-271, Montreal, Quebec, Canada. NSC-85-2215-E-013-001-
[29]Der-Feng Guo, May 16-17, 1997, “A triangular-barrier resonant tunneling switch,” Proc. The Fourth Military Symposium on Fundamental Science, pp. 265-272, Kaohsiung, Taiwan, Republic of China. NSC-85-2215-E-013-001-
[30]Der-Feng Guo,May 12-13,1997,“Application of carrier-confinement layers to a multistate switch,”Proc.The Fourth Symposium on Nano Device Technology, pp. 4-29-4-31, Hsinchu, Taiwan, Republic of China. NSC-85-2215-E-013-001-
[31]Der-Feng Guo, Nov. 20-21, 1997, “GaAs-InGaP switching device with multiple negative-differential-resistance performances,” Proc. Electronic Devices and Materials Symposium, pp. 203-206, Chung-Li, Taiwan, Republic of China.
[32]Der-Feng Guo, May 21-22, 1998, “A GaAs-InGaP triangular-barrier optoelectronic switch grown by metalorganic chemical vapor deposition,” Proc. The Fifth Symposium on Nano Device Technology, pp. 100-102, Hsinchu, Taiwan, Republic of China.
[33]Der-Feng Guo, May 21-22, 1998,“An optoelectronic switch based on npn heterostructure,”The Fifth Symposium on Nano Device Technology, pp. 143-145, Hsinchu, Taiwan, Republic of China.
[34]Der-Feng Guo, Aug. 31-Sept. 04, 1998, “A GaAs-AlGaAs heterostructure optoelectronic switch,” Tenth International Conference on Molecular Beam Epitaxy, Cannes, France.
[35]Der-Feng Guo, May 9-14, 1999, “Passivatoin layer influence on the optoelectronic switch in double heterostructure-emitter bipolar transistor,” 8th International Symposium on Passivity of Metals and Semiconductors, Jasper, Alberta, Canada.
[36]Der-Feng Guo, May 2-7,1999,“A triangular-barrier optoelectronic switch,”State-of-the-Art Program on Compound Semiconductors Symposium at the 195th Meeting of the Electrochemical Society, Seattle, WA, USA.
[37]Der-Feng Guo, May 21, 1999,“Investgation of switches with double carrier confinement structures,” Proc. The Sixth Military Symposium on Fundamental Science, pp. , Kaohsiung, Taiwan, Republic of China.
[38]Der-Feng Guo, May 21, 1999, “Theoretical and experimental investgations of functional resonant-tunneling transistors with triple-well emitter structures,” Proc. The Sixth Military Symposium on Fundamental Science, pp. , Kaohsiung, Taiwan, Republic of China.
[39]Der-Feng Guo, Aug. 1-4, 1999, “A triangular-barrier optoelectronic switch with light-controllable performances,” 34th Intersociety Energy Conversion Engineering Confernce, Vancouver, Britich Columbia, Canada.
[40]Der-Feng Guo, Sept. 15-17, 1999, “A multiple-valued Schottky-contact triangular-barrier optoelectronic switch,” The Third International Conference on Low Dimensional Structures and Devices, Renaissance Antalya Resort, Antalya, Turkey.
[41]Der-Feng Guo, Sept. 27- Oct. 1, 1999, “Optoelectronic switch performance in double heterostructure-mitter bipolar transistor,” The Twelfth International Conference on Ternary and Multinary Compounds, National Tsing Hua University, Hsinchu, Taiwan.
[42]Der-Feng Guo, Dec. 16-17, 1999, “A GaAs-InGaAs multistate optoelectronic switch,” Optics and Photonics TAIWAN’99, Chung-li, Taiwan.
[43]Der-Feng Guo, Dec. 1-2, 2001, “Fabrication of high-speed triangular-barrier phototransistors,” 八十九年度第二期國科會微電子學門專題計畫研究成果研討會, Taichung, Taiwan.
[44]Der-Feng Guo, June 7, 2002, “A double-barrier-emitter triangular barrier switch,” Proc. The ninth Military Symposium on Fundamental Science, pp.1-6, Kaohsiung, Taiwan, Republic of China.
[45]Der-Feng Guo, Dec. 6-7, 2002, “Fabrication of High Electron Mobility Transistor,”九十年度國科會微電子學門專題計畫研究成果研討會, Tainan, Taiwan.
[46]Jing-Yuh Chen, Der-Feng Guo, Kuan-Ming Lee, Hung-Ming Chuang, Chun-Yuan Chen, and Wen-Chau Liu, Sept. 16-18, 2003, “A double-barrier-emitter triangular barrier optoelectronic switch,” the 2003 International Conference on Solid State Devices and Materials (SSDM 2003), pp. 542-543, Tokyo, Japan.
[47]Jing-Yuh Chen, Der-Feng Guo, Hung-Ming Chuang, Chun-Yuan Chen, and Wen-Chau Liu, Nov. 21-22, 2003, “Characteristics of a triangular-barrier optoelectronic switch,” the 2003 Electron Devices and Matterials Symposia (EDMS 2003), Keelung, Taiwan.
[48]Jing-Yuh Chen, Der-Feng Guo, Hung-Ming Chuang, Chun-Yuan Chen, and Wen-Chau Liu, Nov. 21-22, 2003, “Illumination effect on the switching characteristics of double heterostructure-emitter bipolar transistor,” the 2003 Electron Devices and Matterials Symposia (EDMS 2003), Keelung, Taiwan.
[49]Jing-Yuh Chen, Der-Feng Guo, Chun-Yuan Chen, Po-Hsien Lai, Yan-Ying Tsai, and Wen-Chau Liu, Sept. 6-10, 2004, “Characteristics of a double-barrier-emitter triangular-barrier optoelectronic switch (DTOS),” Proc. the 5th Int. Vacuum Electron Siources Conference (IVESC2004), pp. 245-247, Beijing, China.
[50]Der-Feng Guo and Chia-Kun Lee, June 3, 2005, “A new npn bulk-barrier optoelectronic switch,” Proc. The 12nd Military Symposium on Fundamental Science, pp. C45-C48, Kaohsiung, Taiwan, Republic of China.
[51]Der-Feng Guo and Chia-Kun Lee, June 3, 2005, “An optoelectronic switch with N- and S-Shaped negative-differntial-resistance characteristics,”Proc. The 12nd Military Symposium on Fundamental Science, pp. C49-C56, Kaohsiung, Taiwan, Republic of China.
[52]Der-Feng Guo, Po-Hsien Lai, Ssu-I Fu, Yan-Ying Tsai, Ching-Wen Hung, and Wen-Chau Liu, Nov. 24-25, 2005, “Electric and optical performances of a triangular-barrier resonant-tunneling diode,”the 2005 Electron Device and Matterials Symposia (EDMS 2005), Kaohsiung, Taiwan.
[53]Der-Feng Guo, Po-Hsien Lai, Ssu-I Fu, Yan-Ying Tsai, Ching-Wen Hung, and Wen-Chau Liu, Nov. 24-25, 2005, “An InAlGaP bulk-barrier optoelectronic switch,”the 2005 Electron Devices and Matterials Symposia (EDMS 2005), Kaohsiung, Taiwan.
[54]Chih-Hung Yeng, Der-Feng Guo, Po-Hsien Lai, Ssu-Yi Fu, Ching-Wen Hung, and Wen-Chau Liu, Dec. 7-8, 2006, “Characteristics Investigation of npn heterostructural optoelectronic switches,” Proc. The 2006 International Electron Devices and Matterials Symposia (EDMS 2006), pp. 76-77, Tainan, Taiwan.
[55]Der-Feng Guo, Jung-Hui Tsai, Tzu-Yen Weng , Chih-Hung Yeng, Po-Hsien Lai, Ssu-Yi Fu, Ching-Wen Hung and Wen-Chau Liu, May 16-19, 2007, “Investigation on Heterostructural Optoelectronic Switches,” Proc. 2nd International Symposium on Functional Materials (ISFM 2007), pp. 77, Hangzhou, China.
[56]Jung-Hui Tsai,Der-Feng Guo,Yu-Chi Kang,Tzu-Yen Weng,May 16-19, 2007,Characteristics of InP/InGaAs PNP Heterostructure-Emitter Bipolar transistor (HEBT) ,”Proc. 2ndInternational Symposium on Functional Materials (ISFM 2007),pp.94, Hangzhou, China.
[57]Der-Feng Guo, Jung-Hui Tsai and Ming-Yue Fu, July 9-13, 2007, “A Multiple-Operation-State Optoelectronic Switch,” Proc. Optoelectronics and Communications Conference (OECC)/International Conference on Integrated Optics and Optical Fiber Communication (IOOC) 2007, pp. 506-507, Kanagawa, Japan.
[58]Jung-Hui Tsai, Der-Feng Guo and Ming-Yue Fu, July 9-13, 2007, “Optoelectronic Switch with S-Shaped Negative Differential Resistance,” Proc. Optoelectronics and Communications Conference (OECC)/International Conference on Integrated Optics and Optical Fiber Communication (IOOC) 2007, pp. 758-759, Kanagawa, Japan.
[59]Der-Feng Guo,Nov.9,2007,“A Method to Increase the Optical Sensitivity and Reduce the Holding Power in an Optoelectronic Switch,”Proc.Energy 2007, Taoyuan,Taiwan.
[60]Der-Feng Guo, Dec. 1, 2007, “Design and fabrication of new heterostructural optoelectronic device,”九十五年度國科會微電子學門專題計畫研究成果研討會, Hsinchu, Taiwan.
[61]Der-Feng Guo, Jung-Hui Tsai, Chien-Ming Li, Dec. 29-31, 2007, “A pnpn GaAs-InGaAs optoelectronic switch,” Proc. 2007 International Conference on Microelectronics, pp.446-448, Cairo, Egypt.
